On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs
Author
Source
Active and Passive Electronic Components
Issue
Vol. 2015, Issue 2015 (31 Dec. 2015), pp.1-12, 12 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2015-01-01
Country of Publication
Egypt
No. of Pages
12
Main Subjects
Abstract EN
This work deals with the assessment of gate dielectric for 4H-SiC MOSFETs using technology based two-dimensional numerical computer simulations.
Results are studied for variety of gate dielectric candidates with varying thicknesses using well-known Fowler-Nordheim tunneling model.
Compared to conventional SiO2 as a gate dielectric for 4H-SiC MOSFETs, high-k gate dielectric such as HfO2 reduces significantly the amount of electric field in the gate dielectric with equal gate dielectric thickness and hence the overall gate current density.
High-k gate dielectric further reduces the shift in the threshold voltage with varying dielectric thicknesses, thus leading to better process margin and stable device operating behavior.
For fixed dielectric thickness, a total shift in the threshold voltage of about 2.5 V has been observed with increasing dielectric constant from SiO2 (k=3.9) to HfO2 (k=25).
This further results in higher transconductance of the device with the increase of the dielectric constant from SiO2 to HfO2.
Furthermore, 4H-SiC MOSFETs are found to be more sensitive to the shift in the threshold voltage with conventional SiO2 as gate dielectric than high-k dielectric with the presence of interface state charge density that is typically observed at the interface of dielectric and 4H-SiC MOS surface.
American Psychological Association (APA)
Nawaz, Muhammad. 2015. On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs. Active and Passive Electronic Components،Vol. 2015, no. 2015, pp.1-12.
https://search.emarefa.net/detail/BIM-1053834
Modern Language Association (MLA)
Nawaz, Muhammad. On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs. Active and Passive Electronic Components No. 2015 (2015), pp.1-12.
https://search.emarefa.net/detail/BIM-1053834
American Medical Association (AMA)
Nawaz, Muhammad. On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs. Active and Passive Electronic Components. 2015. Vol. 2015, no. 2015, pp.1-12.
https://search.emarefa.net/detail/BIM-1053834
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1053834