The Achievement of a Zinc Oxide-Based Homojunction Diode Using Radio Frequency Magnetron Cosputtering System
Joint Authors
Chen, Tai-Hong
Lai, Li-Wen
Liu, Day-Shan
Chiu, Hung-Jen
Lee, Ching-Ting
Hong, Jhen-Dong
Source
Issue
Vol. 2015, Issue 2015 (31 Dec. 2015), pp.1-8, 8 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2015-04-02
Country of Publication
Egypt
No. of Pages
8
Main Subjects
Abstract EN
(Al + N)-codoped p-type zinc oxide (ZnO)/undoped n-type ZnO homojunction structure was deposited onto Si (100) substrate by using radio frequency (rf) magnetron cosputtering system.
Transparent indium tin oxide (ITO)-ZnO cosputtered film was employed as the ohmic contact electrode to the n-type ZnO film, and the specific contact resistance was optimized to 2.9×10-6 Ω cm2 after treating by a rapid thermal annealing (RTA) process at 400°C for 5 min under vacuum ambient.
The ohmic contact behavior between the metallic Ni/Au and p-ZnO film also was improved to 3.5×10-5 Ω cm2 after annealing at 300°C for 3 min under nitrogen ambient.
The interfacial diffusion of these ohmic contact systems which led to the optimization of the specific contact resistances by the RTA process was investigated by the Auger electron spectroscopy (AES) depth profile measurements.
The diode characteristics of the resulting p-ZnO/n-ZnO homojunction structure realized with these ohmic contact electrodes were confirmed by current-voltage (I-V) measurement, which performed a forward turn-on voltage of 1.44 V with a reverse current of 1.1×10-5 A at −2 V.
American Psychological Association (APA)
Chiu, Hung-Jen& Chen, Tai-Hong& Lai, Li-Wen& Lee, Ching-Ting& Hong, Jhen-Dong& Liu, Day-Shan. 2015. The Achievement of a Zinc Oxide-Based Homojunction Diode Using Radio Frequency Magnetron Cosputtering System. Journal of Nanomaterials،Vol. 2015, no. 2015, pp.1-8.
https://search.emarefa.net/detail/BIM-1068889
Modern Language Association (MLA)
Chiu, Hung-Jen…[et al.]. The Achievement of a Zinc Oxide-Based Homojunction Diode Using Radio Frequency Magnetron Cosputtering System. Journal of Nanomaterials No. 2015 (2015), pp.1-8.
https://search.emarefa.net/detail/BIM-1068889
American Medical Association (AMA)
Chiu, Hung-Jen& Chen, Tai-Hong& Lai, Li-Wen& Lee, Ching-Ting& Hong, Jhen-Dong& Liu, Day-Shan. The Achievement of a Zinc Oxide-Based Homojunction Diode Using Radio Frequency Magnetron Cosputtering System. Journal of Nanomaterials. 2015. Vol. 2015, no. 2015, pp.1-8.
https://search.emarefa.net/detail/BIM-1068889
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1068889