Effects of Precursor-Substrate Distances on the Growth of GaN Nanowires
Joint Authors
Zheng, Xuejun
Cheng, Hongbin
Li, Jia
Wu, Dongxu
Li, Yanxi
Wang, Zhiguang
Wang, Xianying
Source
Issue
Vol. 2015, Issue 2015 (31 Dec. 2015), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2015-08-12
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Abstract EN
GaN nanowires were synthesized through the Ni-catalyzed chemical vapor deposition (CVD) method using Ga2O3/GaN mixtures as gallium sources, and precursor-substrate distances were investigated as the important factor for the growth of GaN nanowires.
The microstructure, composition, and photoluminescence property were characterized by X-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, and photoluminescence spectra.
The results showed that single crystalline GaN nanowires with the diameter of about 90 nm and the length up to tens of micrometers had been grown thickly across Si (100) substrates with uniform density.
Moreover, the variations of the GaN nanowire morphology, density, and size were largely attributed to substrate positions which would influence Ga precursor density in the carrier gas, the saturation degree of gaseous reactants, and the catalyst activity, respectively, in the fabrication of GaN nanowires by the vapour liquid solid mechanism.
American Psychological Association (APA)
Cheng, Hongbin& Li, Jia& Wu, Dongxu& Li, Yanxi& Wang, Zhiguang& Wang, Xianying…[et al.]. 2015. Effects of Precursor-Substrate Distances on the Growth of GaN Nanowires. Journal of Nanomaterials،Vol. 2015, no. 2015, pp.1-6.
https://search.emarefa.net/detail/BIM-1068929
Modern Language Association (MLA)
Cheng, Hongbin…[et al.]. Effects of Precursor-Substrate Distances on the Growth of GaN Nanowires. Journal of Nanomaterials No. 2015 (2015), pp.1-6.
https://search.emarefa.net/detail/BIM-1068929
American Medical Association (AMA)
Cheng, Hongbin& Li, Jia& Wu, Dongxu& Li, Yanxi& Wang, Zhiguang& Wang, Xianying…[et al.]. Effects of Precursor-Substrate Distances on the Growth of GaN Nanowires. Journal of Nanomaterials. 2015. Vol. 2015, no. 2015, pp.1-6.
https://search.emarefa.net/detail/BIM-1068929
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1068929