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Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials
Joint Authors
Source
Issue
Vol. 2015, Issue 2015 (31 Dec. 2015), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2015-12-09
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Abstract EN
We investigated amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using different high-k gate dielectric materials such as silicon nitride (Si3N4) and aluminum oxide (Al2O3) at low temperature process (<300°C) and compared them with low temperature silicon dioxide (SiO2).
The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current.
In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process.
The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue.
We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.
American Psychological Association (APA)
Lin, Yu-Hsien& Chou, Jay-Chi. 2015. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials. Journal of Nanomaterials،Vol. 2015, no. 2015, pp.1-6.
https://search.emarefa.net/detail/BIM-1069301
Modern Language Association (MLA)
Lin, Yu-Hsien& Chou, Jay-Chi. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials. Journal of Nanomaterials No. 2015 (2015), pp.1-6.
https://search.emarefa.net/detail/BIM-1069301
American Medical Association (AMA)
Lin, Yu-Hsien& Chou, Jay-Chi. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials. Journal of Nanomaterials. 2015. Vol. 2015, no. 2015, pp.1-6.
https://search.emarefa.net/detail/BIM-1069301
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1069301