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Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability
Joint Authors
Kamińska, Eliana
Borysiewicz, Michał
Piotrowska, Anna
Kuchuk, A. V.
Wzorek, M.
Ratajczak, R.
Golaszewska, K.
Kladko, V.
Borowicz, Paweł
Source
Advances in Condensed Matter Physics
Issue
Vol. 2016, Issue 2016 (31 Dec. 2016), pp.1-26, 26 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2016-03-16
Country of Publication
Egypt
No. of Pages
26
Main Subjects
Abstract EN
The fabrication of low-resistance and thermal stable ohmic contacts is important for realization of reliable SiC devices.
For the n-type SiC, Ni-based metallization is most commonly used for Schottky and ohmic contacts.
Many experimental studies have been performed in order to understand the mechanism of ohmic contact formation and different models were proposed to explain the Schottky to ohmic transition for Ni/SiC contacts.
In the present review, we summarize the last key results on the matter and post open questions concerning the unclear issues of ohmic contacts to n-type SiC.
Analysis of the literature data and our own experimental observations have led to the conclusion that the annealing at high temperature leads to the preferential orientation of silicide at the heterointerface (0001)SiC//(013)δ-Ni2Si.
Moreover, we may conclude that only δ-Ni2Si grains play a key role in determining electrical transport properties at the contact/SiC interface.
Finally, we show that the diffusion barriers with free diffusion path microstructure can improve thermal stability of metal-SiC ohmic contacts for high-temperature electronics.
American Psychological Association (APA)
Kuchuk, A. V.& Borowicz, Paweł& Wzorek, M.& Borysiewicz, Michał& Ratajczak, R.& Golaszewska, K.…[et al.]. 2016. Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability. Advances in Condensed Matter Physics،Vol. 2016, no. 2016, pp.1-26.
https://search.emarefa.net/detail/BIM-1094953
Modern Language Association (MLA)
Kuchuk, A. V.…[et al.]. Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability. Advances in Condensed Matter Physics No. 2016 (2016), pp.1-26.
https://search.emarefa.net/detail/BIM-1094953
American Medical Association (AMA)
Kuchuk, A. V.& Borowicz, Paweł& Wzorek, M.& Borysiewicz, Michał& Ratajczak, R.& Golaszewska, K.…[et al.]. Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability. Advances in Condensed Matter Physics. 2016. Vol. 2016, no. 2016, pp.1-26.
https://search.emarefa.net/detail/BIM-1094953
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1094953