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Rapid Melt Growth of Single Crystal InGaAs on Si Substrates
Joint Authors
Bai, Xue
Chen, Chien-Yu
Mukherjee, Niloy
Griffin, Peter B.
Plummer, James D.
Source
Advances in Materials Science and Engineering
Issue
Vol. 2016, Issue 2016 (31 Dec. 2016), pp.1-5, 5 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2016-09-27
Country of Publication
Egypt
No. of Pages
5
Abstract EN
InGaAs integration on Si substrates is an important topic for next generation electronic devices.
Rapid melt growth (RMG) has the potential to grow defect-free lattice mismatched materials on Si at low cost.
Most previous publications have focused on growing binary III–V compounds by RMG, but none have discussed ternary compound materials.
In this paper, we demonstrate the RMG of the single crystal ternary compound InGaAs on Si substrates.
We discuss two main issues.
The first is segregation along the stripe length.
An analytical model is developed to describe the segregation of In/Ga in the grown stripe and the model is compared with experimental data.
The second issue is the dissolution of the Si seed region during RMG, which leads to formation of Si islands inside the InGaAs stripe.
The results of this study are applicable to any compound material in which Si is soluble at the elevated temperatures required for RMG.
American Psychological Association (APA)
Bai, Xue& Chen, Chien-Yu& Mukherjee, Niloy& Griffin, Peter B.& Plummer, James D.. 2016. Rapid Melt Growth of Single Crystal InGaAs on Si Substrates. Advances in Materials Science and Engineering،Vol. 2016, no. 2016, pp.1-5.
https://search.emarefa.net/detail/BIM-1096358
Modern Language Association (MLA)
Bai, Xue…[et al.]. Rapid Melt Growth of Single Crystal InGaAs on Si Substrates. Advances in Materials Science and Engineering No. 2016 (2016), pp.1-5.
https://search.emarefa.net/detail/BIM-1096358
American Medical Association (AMA)
Bai, Xue& Chen, Chien-Yu& Mukherjee, Niloy& Griffin, Peter B.& Plummer, James D.. Rapid Melt Growth of Single Crystal InGaAs on Si Substrates. Advances in Materials Science and Engineering. 2016. Vol. 2016, no. 2016, pp.1-5.
https://search.emarefa.net/detail/BIM-1096358
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1096358