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Peculiarities of Charge Transfer in SiO2(Ni)Si Nanosystems
Joint Authors
Kaniukov, Egor Yu.
Yakimchuk, Dzmitry V.
Bundyukova, Victoria D.
Shumskaya, Alena E.
Amirov, Abdulkarim A.
Demyanov, Sergey E.
Source
Advances in Condensed Matter Physics
Issue
Vol. 2018, Issue 2018 (31 Dec. 2018), pp.1-8, 8 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2018-07-02
Country of Publication
Egypt
No. of Pages
8
Main Subjects
Abstract EN
This work is devoted to study the peculiarities of charge transfer in SiO2(Ni)/Si nanosystems formed as a result of the electrochemical deposition of nickel into the pores of the ion-track silicon oxide template on silicon.
Special attention is given to analysis of the results in the context of the band structure and physical properties of dielectric on semiconductor systems with metallic inclusions in the dielectric matrix.
Experimental studies of the current-voltage characteristics of SiO2(Ni)/Si nanostructures demonstrated that value of potential barrier on the Si/metal interface in the pores of the silicon oxide template depended on temperature.
On the basis of these results an interpretation of the charge transfer mechanisms in SiO2(Ni)/Si nanosystems at different temperature ranges was proposed.
In the temperature region of ~300–200 K charge carrier motion occurs through the n-Si with an employment of metallic clusters in pores being in a contact with the semiconductor, by means of the overbarrier emission of electrons from higher energy levels of Si conduction band.
In the lower temperatures (~200-100 K) a current flow takes place only through the semiconductor due to an increase of resistivity on energy barriers n-Si/metal, which leads to a practically complete exclusion of a participation of the metal in the charge transport process.
In the low temperatures (~100–20 K), the variable range hopping conduction between pores on the SiO2/Si boundary, containing localized states, dominates.
American Psychological Association (APA)
Kaniukov, Egor Yu.& Yakimchuk, Dzmitry V.& Bundyukova, Victoria D.& Shumskaya, Alena E.& Amirov, Abdulkarim A.& Demyanov, Sergey E.. 2018. Peculiarities of Charge Transfer in SiO2(Ni)Si Nanosystems. Advances in Condensed Matter Physics،Vol. 2018, no. 2018, pp.1-8.
https://search.emarefa.net/detail/BIM-1117231
Modern Language Association (MLA)
Kaniukov, Egor Yu.…[et al.]. Peculiarities of Charge Transfer in SiO2(Ni)Si Nanosystems. Advances in Condensed Matter Physics No. 2018 (2018), pp.1-8.
https://search.emarefa.net/detail/BIM-1117231
American Medical Association (AMA)
Kaniukov, Egor Yu.& Yakimchuk, Dzmitry V.& Bundyukova, Victoria D.& Shumskaya, Alena E.& Amirov, Abdulkarim A.& Demyanov, Sergey E.. Peculiarities of Charge Transfer in SiO2(Ni)Si Nanosystems. Advances in Condensed Matter Physics. 2018. Vol. 2018, no. 2018, pp.1-8.
https://search.emarefa.net/detail/BIM-1117231
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1117231