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Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate
Joint Authors
Zhang, Chao
Song, Jianjun
Zhang, Jie
Shu-Lin, Liu
Source
Advances in Condensed Matter Physics
Issue
Vol. 2018, Issue 2018 (31 Dec. 2018), pp.1-8, 8 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2018-08-07
Country of Publication
Egypt
No. of Pages
8
Main Subjects
Abstract EN
The high-Ge-content SiGe material on the Si substrate can be applied not only to electronic devices but also to optical devices and is one of the focuses of research and development in the field.
However, due to the 4.2% lattice mismatch between Si and Ge, the epitaxial growth of the high-Ge-content SiGe epitaxial layer directly on the Si substrate has a high defect density, which will seriously affect the subsequent device performance.
Laser recrystallization technique is a fast and low-cost method to effectively reduce threading dislocation density (TDD) in epitaxial high-Ge-content SiGe films on Si.
In this paper, by means of finite element numerical simulation, a 808 nm laser recrystallization thermal physics model of a high-Ge-content SiGe film (for example, Si0.2Ge0.8) on a Si substrate was established (temperature distribution physical model of Si0.2Ge0.8 epitaxial layer under different laser power, Si0.2Ge0.8 epitaxial layer thickness, and initial temperature).
The results of this paper can provide important technical support for the preparation of high-quality high-Ge-content SiGe epilayers on Si substrates by laser recrystallization.
American Psychological Association (APA)
Zhang, Chao& Song, Jianjun& Zhang, Jie& Shu-Lin, Liu. 2018. Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate. Advances in Condensed Matter Physics،Vol. 2018, no. 2018, pp.1-8.
https://search.emarefa.net/detail/BIM-1117279
Modern Language Association (MLA)
Zhang, Chao…[et al.]. Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate. Advances in Condensed Matter Physics No. 2018 (2018), pp.1-8.
https://search.emarefa.net/detail/BIM-1117279
American Medical Association (AMA)
Zhang, Chao& Song, Jianjun& Zhang, Jie& Shu-Lin, Liu. Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate. Advances in Condensed Matter Physics. 2018. Vol. 2018, no. 2018, pp.1-8.
https://search.emarefa.net/detail/BIM-1117279
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1117279