First-Principles Calculations on Atomic and Electronic Properties of Ge4H-SiC Heterojunction
Joint Authors
Xu, Bei
Zhu, Changjun
He, Xiaomin
Zang, Yuan
Lin, Shenghuang
Li, Lianbi
Feng, Song
Lei, Qianqian
Source
Advances in Condensed Matter Physics
Issue
Vol. 2018, Issue 2018 (31 Dec. 2018), pp.1-9, 9 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2018-03-20
Country of Publication
Egypt
No. of Pages
9
Main Subjects
Abstract EN
First-principles calculation is employed to investigate atomic and electronic properties of Ge/SiC heterojunction with different Ge orientations.
Based on the density functional theory, the work of adhesion, relaxation energy, density of states, and total charge density are calculated.
It is shown that Ge(110)/4H-SiC(0001) heterointerface possesses higher adhesion energy than that of Ge(111)/4H-SiC(0001) interface, and hence Ge/4H-SiC(0001) heterojunction with Ge[110] crystalline orientation exhibits more stable characteristics.
The relaxation energy of Ge(110)/4H-SiC(0001) heterojunction interface is lower than that of Ge(111)/4H-SiC(0001) interface, indicating that Ge(110)/4H-SiC(0001) interface is easier to form at relative low temperature.
The interfacial bonding is analysed using partial density of states and total charge density distribution, and the results show that the bonding is contributed by the Ge-Si bonding.
American Psychological Association (APA)
Xu, Bei& Zhu, Changjun& He, Xiaomin& Zang, Yuan& Lin, Shenghuang& Li, Lianbi…[et al.]. 2018. First-Principles Calculations on Atomic and Electronic Properties of Ge4H-SiC Heterojunction. Advances in Condensed Matter Physics،Vol. 2018, no. 2018, pp.1-9.
https://search.emarefa.net/detail/BIM-1117323
Modern Language Association (MLA)
Xu, Bei…[et al.]. First-Principles Calculations on Atomic and Electronic Properties of Ge4H-SiC Heterojunction. Advances in Condensed Matter Physics No. 2018 (2018), pp.1-9.
https://search.emarefa.net/detail/BIM-1117323
American Medical Association (AMA)
Xu, Bei& Zhu, Changjun& He, Xiaomin& Zang, Yuan& Lin, Shenghuang& Li, Lianbi…[et al.]. First-Principles Calculations on Atomic and Electronic Properties of Ge4H-SiC Heterojunction. Advances in Condensed Matter Physics. 2018. Vol. 2018, no. 2018, pp.1-9.
https://search.emarefa.net/detail/BIM-1117323
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1117323