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Low Temperature Conductivity in n-Type Noncompensated Silicon below Insulator-Metal Transition
Joint Authors
Svito, Ivan A.
Fedotov, Alexander K.
Danilyuk, A. L.
Trafimenko, A. G.
Prischepa, S. L.
Source
Advances in Condensed Matter Physics
Issue
Vol. 2017, Issue 2017 (31 Dec. 2017), pp.1-12, 12 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2017-02-14
Country of Publication
Egypt
No. of Pages
12
Main Subjects
Abstract EN
We investigate the transport properties of n-type noncompensated silicon below the insulator-metal transition by measuring the electrical and magnetoresistances as a function of temperature T for the interval 2–300 K.
Experimental data are analyzed taking into account possible simple activation and hopping mechanisms of the conductivity in the presence of two impurity bands, the upper and lower Hubbard bands (UHB and LHB, resp.).
We demonstrate that the charge transport develops with decreasing temperature from the band edge activation (110–300 K) to the simple activation with much less energy associated with the activation motion in the UHB (28–90 K).
Then, the Mott-type variable range hopping (VRH) with spin dependent hops occurs (5–20 K).
Finally, the VRH in the presence of the hard gap (HG) between LHB and UHB (2–4 K) takes place.
We propose the empiric expression for the low T density of states which involves both the UHB and LHB and takes into account the crossover from the HG regime to the Mott-type VRH with increasing temperature.
This allows us to fit the low T experimental data with high accuracy.
American Psychological Association (APA)
Danilyuk, A. L.& Trafimenko, A. G.& Fedotov, Alexander K.& Svito, Ivan A.& Prischepa, S. L.. 2017. Low Temperature Conductivity in n-Type Noncompensated Silicon below Insulator-Metal Transition. Advances in Condensed Matter Physics،Vol. 2017, no. 2017, pp.1-12.
https://search.emarefa.net/detail/BIM-1121609
Modern Language Association (MLA)
Danilyuk, A. L.…[et al.]. Low Temperature Conductivity in n-Type Noncompensated Silicon below Insulator-Metal Transition. Advances in Condensed Matter Physics No. 2017 (2017), pp.1-12.
https://search.emarefa.net/detail/BIM-1121609
American Medical Association (AMA)
Danilyuk, A. L.& Trafimenko, A. G.& Fedotov, Alexander K.& Svito, Ivan A.& Prischepa, S. L.. Low Temperature Conductivity in n-Type Noncompensated Silicon below Insulator-Metal Transition. Advances in Condensed Matter Physics. 2017. Vol. 2017, no. 2017, pp.1-12.
https://search.emarefa.net/detail/BIM-1121609
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1121609