Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron
Joint Authors
Source
Advances in Materials Science and Engineering
Issue
Vol. 2018, Issue 2018 (31 Dec. 2018), pp.1-10, 10 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2018-02-28
Country of Publication
Egypt
No. of Pages
10
Abstract EN
Novel method of boron diffusion at low temperatures between 1150 and 1300°C is used for the formation of both p-i SiC junction and i-region in one technological process.
As the junction formation conditions in this method are essentially different from those in the conventional diffusion (low temperatures and process of diffusion are accompanied by formation of structure defects), it is of special interest to identify advantages and disadvantages of a new method of diffusion.
Developed SiC p-i-n junction diodes have fast switching time, and the duration of the reverse recovery current is less than 10 ns with a breakdown voltage of 120–140 V.
Fabricated diodes possess capability to operate at temperatures up to 300°C.
As the temperature of diffusion process is lower than the melting temperature of silicon, this new technology allows fabrication of diodes on the base of SiC/Si epitaxial structures.
American Psychological Association (APA)
Atabaev, I. G.& Juraev, Kh. N.. 2018. Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron. Advances in Materials Science and Engineering،Vol. 2018, no. 2018, pp.1-10.
https://search.emarefa.net/detail/BIM-1122210
Modern Language Association (MLA)
Atabaev, I. G.& Juraev, Kh. N.. Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron. Advances in Materials Science and Engineering No. 2018 (2018), pp.1-10.
https://search.emarefa.net/detail/BIM-1122210
American Medical Association (AMA)
Atabaev, I. G.& Juraev, Kh. N.. Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron. Advances in Materials Science and Engineering. 2018. Vol. 2018, no. 2018, pp.1-10.
https://search.emarefa.net/detail/BIM-1122210
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1122210