Erratum to “Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors”
Joint Authors
Source
Advances in Materials Science and Engineering
Issue
Vol. 2017, Issue 2017 (31 Dec. 2017), pp.1-1, 1 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2017-02-26
Country of Publication
Egypt
No. of Pages
1
Abstract EN
In the article titled “Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors” [1], there was an error in reference [14] which should be corrected as follows:
American Psychological Association (APA)
Khan, Z. N.& Ahmed, S.& Ali, M.. 2017. Erratum to “Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors”. Advances in Materials Science and Engineering،Vol. 2017, no. 2017, pp.1-1.
https://search.emarefa.net/detail/BIM-1124360
Modern Language Association (MLA)
Khan, Z. N.…[et al.]. Erratum to “Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors”. Advances in Materials Science and Engineering No. 2017 (2017), pp.1-1.
https://search.emarefa.net/detail/BIM-1124360
American Medical Association (AMA)
Khan, Z. N.& Ahmed, S.& Ali, M.. Erratum to “Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors”. Advances in Materials Science and Engineering. 2017. Vol. 2017, no. 2017, pp.1-1.
https://search.emarefa.net/detail/BIM-1124360
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1124360
