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Comparative Simulation Analysis of Process Parameter Variations in 20 nm Triangular FinFET
Joint Authors
Gill, Sandeep S.
Shukla, Satyam
Kaur, Navneet
Jatana, H. S.
Nehru, Varun
Source
Active and Passive Electronic Components
Issue
Vol. 2017, Issue 2017 (31 Dec. 2017), pp.1-8, 8 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2017-03-21
Country of Publication
Egypt
No. of Pages
8
Main Subjects
Abstract EN
Technology scaling below 22 nm has brought several detrimental effects such as increased short channel effects (SCEs) and leakage currents.
In deep submicron technology further scaling in gate length and oxide thickness can be achieved by changing the device structure of MOSFET.
For 10–30 nm channel length multigate MOSFETs have been considered as most promising devices and FinFETs are the leading multigate MOSFET devices.
Process parameters can be varied to obtain the desired performance of the FinFET device.
In this paper, evaluation of on-off current ratio (Ion/Ioff), subthreshold swing (SS) and Drain Induced Barrier Lowering (DIBL) for different process parameters, that is, doping concentration (1015/cm3 to 1018/cm3), oxide thickness (0.5 nm and 1 nm), and fin height (10 nm to 40 nm), has been presented for 20 nm triangular FinFET device.
Density gradient model used in design simulation incorporates the considerable quantum effects and provides more practical environment for device simulation.
Simulation result shows that fin shape has great impact on FinFET performance and triangular fin shape leads to reduction in leakage current and SCEs.
Comparative analysis of simulation results has been investigated to observe the impact of process parameters on the performance of designed FinFET.
American Psychological Association (APA)
Shukla, Satyam& Gill, Sandeep S.& Kaur, Navneet& Jatana, H. S.& Nehru, Varun. 2017. Comparative Simulation Analysis of Process Parameter Variations in 20 nm Triangular FinFET. Active and Passive Electronic Components،Vol. 2017, no. 2017, pp.1-8.
https://search.emarefa.net/detail/BIM-1125338
Modern Language Association (MLA)
Shukla, Satyam…[et al.]. Comparative Simulation Analysis of Process Parameter Variations in 20 nm Triangular FinFET. Active and Passive Electronic Components No. 2017 (2017), pp.1-8.
https://search.emarefa.net/detail/BIM-1125338
American Medical Association (AMA)
Shukla, Satyam& Gill, Sandeep S.& Kaur, Navneet& Jatana, H. S.& Nehru, Varun. Comparative Simulation Analysis of Process Parameter Variations in 20 nm Triangular FinFET. Active and Passive Electronic Components. 2017. Vol. 2017, no. 2017, pp.1-8.
https://search.emarefa.net/detail/BIM-1125338
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1125338