CMOS Realization of All-Positive Pinched Hysteresis Loops
Joint Authors
El Wakil, Ahmed
Maundy, Brent
Psychalinos, C.
Source
Issue
Vol. 2017, Issue 2017 (31 Dec. 2017), pp.1-15, 15 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2017-08-06
Country of Publication
Egypt
No. of Pages
15
Main Subjects
Abstract EN
Two novel nonlinear circuits that exhibit an all-positive pinched hysteresis loop are proposed.
These circuits employ two NMOS transistors, one of which operates in its triode region, in addition to two first-order filter sections.
We show the equivalency to a charge-controlled resistance (memristance) in a decremental state via detailed analysis.
Simulation and experimental results verify the proposed theory.
American Psychological Association (APA)
Maundy, Brent& El Wakil, Ahmed& Psychalinos, C.. 2017. CMOS Realization of All-Positive Pinched Hysteresis Loops. Complexity،Vol. 2017, no. 2017, pp.1-15.
https://search.emarefa.net/detail/BIM-1143458
Modern Language Association (MLA)
Maundy, Brent…[et al.]. CMOS Realization of All-Positive Pinched Hysteresis Loops. Complexity No. 2017 (2017), pp.1-15.
https://search.emarefa.net/detail/BIM-1143458
American Medical Association (AMA)
Maundy, Brent& El Wakil, Ahmed& Psychalinos, C.. CMOS Realization of All-Positive Pinched Hysteresis Loops. Complexity. 2017. Vol. 2017, no. 2017, pp.1-15.
https://search.emarefa.net/detail/BIM-1143458
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1143458