CMOS Realization of All-Positive Pinched Hysteresis Loops

Joint Authors

El Wakil, Ahmed
Maundy, Brent
Psychalinos, C.

Source

Complexity

Issue

Vol. 2017, Issue 2017 (31 Dec. 2017), pp.1-15, 15 p.

Publisher

Hindawi Publishing Corporation

Publication Date

2017-08-06

Country of Publication

Egypt

No. of Pages

15

Main Subjects

Philosophy

Abstract EN

Two novel nonlinear circuits that exhibit an all-positive pinched hysteresis loop are proposed.

These circuits employ two NMOS transistors, one of which operates in its triode region, in addition to two first-order filter sections.

We show the equivalency to a charge-controlled resistance (memristance) in a decremental state via detailed analysis.

Simulation and experimental results verify the proposed theory.

American Psychological Association (APA)

Maundy, Brent& El Wakil, Ahmed& Psychalinos, C.. 2017. CMOS Realization of All-Positive Pinched Hysteresis Loops. Complexity،Vol. 2017, no. 2017, pp.1-15.
https://search.emarefa.net/detail/BIM-1143458

Modern Language Association (MLA)

Maundy, Brent…[et al.]. CMOS Realization of All-Positive Pinched Hysteresis Loops. Complexity No. 2017 (2017), pp.1-15.
https://search.emarefa.net/detail/BIM-1143458

American Medical Association (AMA)

Maundy, Brent& El Wakil, Ahmed& Psychalinos, C.. CMOS Realization of All-Positive Pinched Hysteresis Loops. Complexity. 2017. Vol. 2017, no. 2017, pp.1-15.
https://search.emarefa.net/detail/BIM-1143458

Data Type

Journal Articles

Language

English

Notes

Includes bibliographical references

Record ID

BIM-1143458