Confirmation of the Degradation of Single Junction Amorphous Silicon Modules (a-Si:H)
Joint Authors
Meyer, E. L.
Osayemwenre, G. O.
Source
International Journal of Photoenergy
Issue
Vol. 2019, Issue 2019 (31 Dec. 2019), pp.1-13, 13 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2019-12-30
Country of Publication
Egypt
No. of Pages
13
Main Subjects
Abstract EN
This study examines the degradation of single junction amorphous silicon (a-Si:H) photovoltaic (PV) modules.
It summarises the main results obtained from over 7 years of field investigation of the degradation mechanisms of a-Si:H modules.
The investigation was based on performance parameters such as fill factors, parasitic resistances, and ideality factors.
The initial efficiencies for these modules were in accordance with the expected values; however, a significant decrease was observed during the monitoring period.
American Psychological Association (APA)
Osayemwenre, G. O.& Meyer, E. L.. 2019. Confirmation of the Degradation of Single Junction Amorphous Silicon Modules (a-Si:H). International Journal of Photoenergy،Vol. 2019, no. 2019, pp.1-13.
https://search.emarefa.net/detail/BIM-1167001
Modern Language Association (MLA)
Osayemwenre, G. O.& Meyer, E. L.. Confirmation of the Degradation of Single Junction Amorphous Silicon Modules (a-Si:H). International Journal of Photoenergy No. 2019 (2019), pp.1-13.
https://search.emarefa.net/detail/BIM-1167001
American Medical Association (AMA)
Osayemwenre, G. O.& Meyer, E. L.. Confirmation of the Degradation of Single Junction Amorphous Silicon Modules (a-Si:H). International Journal of Photoenergy. 2019. Vol. 2019, no. 2019, pp.1-13.
https://search.emarefa.net/detail/BIM-1167001
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1167001
