Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation
Joint Authors
Arora, Swati
Jaimini, Vivek
Srivastava, Subodh
Vijay, Y. K.
Source
Issue
Vol. 2017, Issue 2017 (31 Dec. 2017), pp.1-4, 4 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2017-03-22
Country of Publication
Egypt
No. of Pages
4
Main Subjects
Abstract EN
Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method.
Tellurium (Te) and bismuth (Bi) were deposited on silicon substrate in different ratio of thickness.
These films were annealed at 50°C and 100°C.
After heat treatment, the thin films attained the semiconductor nature.
Samples were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to show granular growth.
American Psychological Association (APA)
Arora, Swati& Jaimini, Vivek& Srivastava, Subodh& Vijay, Y. K.. 2017. Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation. Journal of Nanotechnology،Vol. 2017, no. 2017, pp.1-4.
https://search.emarefa.net/detail/BIM-1184071
Modern Language Association (MLA)
Arora, Swati…[et al.]. Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation. Journal of Nanotechnology No. 2017 (2017), pp.1-4.
https://search.emarefa.net/detail/BIM-1184071
American Medical Association (AMA)
Arora, Swati& Jaimini, Vivek& Srivastava, Subodh& Vijay, Y. K.. Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation. Journal of Nanotechnology. 2017. Vol. 2017, no. 2017, pp.1-4.
https://search.emarefa.net/detail/BIM-1184071
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1184071