The Carrier Transport Properties of B-Doped Si Nanocrystal Films with Various Doping Concentrations
Joint Authors
Shan, Dan
Cao, Yunqing
Yang, Ruihong
Wang, Hongyu
Tao, Tao
Source
Issue
Vol. 2020, Issue 2020 (31 Dec. 2020), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2020-08-18
Country of Publication
Egypt
No. of Pages
7
Main Subjects
Abstract EN
B-doped hydrogenated amorphous silicon (a-Si:H) films with various doping concentrations were prepared by a plasma-enhanced chemical vapor deposition (PECVD) technique.
After thermal annealing, the as-deposited samples, B-doped silicon nanocrystals (Si NCs), were obtained in the films.
The electronic properties of B-doped Si NC films with various doping concentrations combined with the microstructural characterization were investigated.
A significant improvement of Hall mobility rising to the maximum of 17.8 cm2/V·s was achieved in the Si NC film after B doping, which is due to the reduction of grain boundary (GB) scattering in the B-doped samples.
With increasing the doping concentration, it was interesting to find that a metal-insulator transition (MIT) took place in the B-doped Si NC films with high doping concentrations.
The different carrier transport properties in the B-doped Si NC films with various doping concentrations were investigated and further discussed with emphasis on the scattering mechanisms in the transport process.
American Psychological Association (APA)
Shan, Dan& Cao, Yunqing& Yang, Ruihong& Wang, Hongyu& Tao, Tao. 2020. The Carrier Transport Properties of B-Doped Si Nanocrystal Films with Various Doping Concentrations. Journal of Nanomaterials،Vol. 2020, no. 2020, pp.1-7.
https://search.emarefa.net/detail/BIM-1188399
Modern Language Association (MLA)
Shan, Dan…[et al.]. The Carrier Transport Properties of B-Doped Si Nanocrystal Films with Various Doping Concentrations. Journal of Nanomaterials No. 2020 (2020), pp.1-7.
https://search.emarefa.net/detail/BIM-1188399
American Medical Association (AMA)
Shan, Dan& Cao, Yunqing& Yang, Ruihong& Wang, Hongyu& Tao, Tao. The Carrier Transport Properties of B-Doped Si Nanocrystal Films with Various Doping Concentrations. Journal of Nanomaterials. 2020. Vol. 2020, no. 2020, pp.1-7.
https://search.emarefa.net/detail/BIM-1188399
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1188399