Self-Ordered Voids Formation in SiO2 Matrix by Ge Outdiffusion
Joint Authors
Vlahovic, B.
Pivac, B.
Dasović, J.
Zorc, H.
Zavašnik, J.
Bernstorff, Sigrid
Dubček, Pavo
Source
Issue
Vol. 2018, Issue 2018 (31 Dec. 2018), pp.1-8, 8 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2018-04-26
Country of Publication
Egypt
No. of Pages
8
Main Subjects
Abstract EN
The annealing behavior of very thin SiO2/Ge multilayers deposited on Si substrate by e-gun deposition in high vacuum was explored.
It is shown that, after annealing at moderate temperatures (800°C) in inert atmosphere, Ge is completely outdiffused from the SiO2 matrix leaving small (about 3 nm) spherical voids embedded in the SiO2 matrix.
These voids are very well correlated and formed at distances governed by the preexisting multilayer structure (in vertical direction) and self-organization (in horizontal direction).
The formed films produce intensive photoluminescence (PL) with a peak at 500 nm.
The explored dynamics of the PL decay show the existence of a very rapid process similar to the one found at Ge/SiO2 defected interface layers.
American Psychological Association (APA)
Pivac, B.& Dubček, Pavo& Dasović, J.& Zorc, H.& Bernstorff, Sigrid& Zavašnik, J.…[et al.]. 2018. Self-Ordered Voids Formation in SiO2 Matrix by Ge Outdiffusion. Journal of Nanomaterials،Vol. 2018, no. 2018, pp.1-8.
https://search.emarefa.net/detail/BIM-1195081
Modern Language Association (MLA)
Pivac, B.…[et al.]. Self-Ordered Voids Formation in SiO2 Matrix by Ge Outdiffusion. Journal of Nanomaterials No. 2018 (2018), pp.1-8.
https://search.emarefa.net/detail/BIM-1195081
American Medical Association (AMA)
Pivac, B.& Dubček, Pavo& Dasović, J.& Zorc, H.& Bernstorff, Sigrid& Zavašnik, J.…[et al.]. Self-Ordered Voids Formation in SiO2 Matrix by Ge Outdiffusion. Journal of Nanomaterials. 2018. Vol. 2018, no. 2018, pp.1-8.
https://search.emarefa.net/detail/BIM-1195081
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1195081