Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates
Joint Authors
Lin, Yu-Chiao
Lo, Ikai
Shih, Hui-Chun
Chou, Mitch M. C.
Schaadt, D. M.
Source
Issue
Vol. 2017, Issue 2017 (31 Dec. 2017), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2017-10-18
Country of Publication
Egypt
No. of Pages
7
Main Subjects
Information Technology and Computer Science
Abstract EN
M -plane GaN thin films were grown on LiAlO2 substrates under different N/Ga flux ratios by plasma-assisted molecular beam epitaxy.
An anisotropic growth of M-plane GaN was demonstrated against the N/Ga flux ratio.
As the N/Ga flux ratio decreased by increasing Ga flux, the GaN surface trended to a flat morphology with stripes along [112-0].
According to high-resolution X-ray diffraction analysis, Li5GaO4 was observed on the interface between GaN and LiAlO2 substrate.
The formation of Li5GaO4 would influence the surface morphology and crystal quality.
American Psychological Association (APA)
Lin, Yu-Chiao& Lo, Ikai& Shih, Hui-Chun& Chou, Mitch M. C.& Schaadt, D. M.. 2017. Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates. Scanning،Vol. 2017, no. 2017, pp.1-7.
https://search.emarefa.net/detail/BIM-1197859
Modern Language Association (MLA)
Lin, Yu-Chiao…[et al.]. Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates. Scanning No. 2017 (2017), pp.1-7.
https://search.emarefa.net/detail/BIM-1197859
American Medical Association (AMA)
Lin, Yu-Chiao& Lo, Ikai& Shih, Hui-Chun& Chou, Mitch M. C.& Schaadt, D. M.. Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates. Scanning. 2017. Vol. 2017, no. 2017, pp.1-7.
https://search.emarefa.net/detail/BIM-1197859
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1197859