Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100)‎ Substrates

Abstract EN

M -plane GaN thin films were grown on LiAlO2 substrates under different N/Ga flux ratios by plasma-assisted molecular beam epitaxy.

An anisotropic growth of M-plane GaN was demonstrated against the N/Ga flux ratio.

As the N/Ga flux ratio decreased by increasing Ga flux, the GaN surface trended to a flat morphology with stripes along [112-0].

According to high-resolution X-ray diffraction analysis, Li5GaO4 was observed on the interface between GaN and LiAlO2 substrate.

The formation of Li5GaO4 would influence the surface morphology and crystal quality.