Temperature Dependence of Dark Count Rate and After Pulsing of a Single-Photon Avalanche Diode with an Integrated Active Quenching Circuit in 0.35 μm CMOS
Joint Authors
Hofbauer, Michael
Steindl, Bernhard
Zimmermann, Horst
Source
Issue
Vol. 2018, Issue 2018 (31 Dec. 2018), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2018-07-02
Country of Publication
Egypt
No. of Pages
7
Main Subjects
Abstract EN
The temperature dependence of a single-photon avalanche diode (SPAD) with an integrated quencher in 0.35 μm CMOS is investigated.
While the dark count rate strongly decreases with decreasing temperature, the after-pulsing probability (APP) does not change a lot in the investigated temperature range from −40°C to 50°C, although the dead time of the active quenching circuit (AQC) is only 9.5 ns.
This and the measured histograms of the interarrival time (IAT) suggest that the traps involved have a very short lifetime, which is not strongly temperature dependent, or alternatively that the traps are not the main source of after pulses in the investigated device.
Consequently, it may be necessary to find another explanation for the after pulses.
American Psychological Association (APA)
Hofbauer, Michael& Steindl, Bernhard& Zimmermann, Horst. 2018. Temperature Dependence of Dark Count Rate and After Pulsing of a Single-Photon Avalanche Diode with an Integrated Active Quenching Circuit in 0.35 μm CMOS. Journal of Sensors،Vol. 2018, no. 2018, pp.1-7.
https://search.emarefa.net/detail/BIM-1202293
Modern Language Association (MLA)
Hofbauer, Michael…[et al.]. Temperature Dependence of Dark Count Rate and After Pulsing of a Single-Photon Avalanche Diode with an Integrated Active Quenching Circuit in 0.35 μm CMOS. Journal of Sensors No. 2018 (2018), pp.1-7.
https://search.emarefa.net/detail/BIM-1202293
American Medical Association (AMA)
Hofbauer, Michael& Steindl, Bernhard& Zimmermann, Horst. Temperature Dependence of Dark Count Rate and After Pulsing of a Single-Photon Avalanche Diode with an Integrated Active Quenching Circuit in 0.35 μm CMOS. Journal of Sensors. 2018. Vol. 2018, no. 2018, pp.1-7.
https://search.emarefa.net/detail/BIM-1202293
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1202293