Identification of deep defects by positron annihilation spectroscopy in annealed GaAs thin films
Other Title(s)
تحديد العيوب البلورية المتشكلة في عينات ملدّنة من زرنيخ الغاليوم بواسطة مطياف فناء البوزيترونات
Author
Source
Tishreen University Journal for Research and Scientific Studies : Basic Sciences Series
Issue
Vol. 43, Issue 1 (28 Feb. 2021), pp.143-152, 10 p.
Publisher
Publication Date
2021-02-28
Country of Publication
Syria
No. of Pages
10
Main Subjects
Abstract EN
Positron annihilation spectroscopy was applied to investigate the defect properties in GaAs thin films at different annealing temperature.
Positron lifetime and Doppler broadening spectroscopy using mono-energetic positron beam were used to identify the defects in the GaAs films.
Theoretical calculations of the positron lifetime were performed.
DBS measurements showed, that with increasing the annealing temperature increases the deep defect density.
Lifetime measurements confirmed this result.
The decomposition of the lifetime spectra of the samples resulted in the detection of two vacancy-related defects: a vacancy 3 or 3 (annealing temperature is less than 650 K) and a negatively charged vacancy complex (annealing temperature is more than 650 K).
Furthermore, Lifetime measurements interpreted the presence of large cluster of vacancies by the near-surface defective regions.
American Psychological Association (APA)
Dalla, Ayham. 2021. Identification of deep defects by positron annihilation spectroscopy in annealed GaAs thin films. Tishreen University Journal for Research and Scientific Studies : Basic Sciences Series،Vol. 43, no. 1, pp.143-152.
https://search.emarefa.net/detail/BIM-1420347
Modern Language Association (MLA)
Dalla, Ayham. Identification of deep defects by positron annihilation spectroscopy in annealed GaAs thin films. Tishreen University Journal for Research and Scientific Studies : Basic Sciences Series Vol. 43, no. 1 (2021), pp.143-152.
https://search.emarefa.net/detail/BIM-1420347
American Medical Association (AMA)
Dalla, Ayham. Identification of deep defects by positron annihilation spectroscopy in annealed GaAs thin films. Tishreen University Journal for Research and Scientific Studies : Basic Sciences Series. 2021. Vol. 43, no. 1, pp.143-152.
https://search.emarefa.net/detail/BIM-1420347
Data Type
Journal Articles
Language
English
Notes
Record ID
BIM-1420347