Subthreshold modeling of dual-halo dual-dielectric triple-material surrounding-gate (DH-DD-TM-SG)‎ MOSFET for improved leakages

Abstract EN

This paper presents a model of subthreshold current and subthreshold swing model for dual-halo dual-dielectric triple-material cylindrical gate all around/surrounding gate (DH-DD-TM-CGAA/SG) MOSFET for improved leakages.

the virtual cathode method is used to derive the current in the subthreshold regime.

the model presented in this paper also incorporates the effect on subthreshold characteristics of the device with variation in radius of silicon pillar and gate oxide thickness.

the channel leakage current is a key metric to evaluate the capability of the device.

the effectiveness of DH-DD-TM-CGAA MOSFET was observed by comparing it with the conventional triple metal structures.

furthermore, the consequence of variation in technology parameter is also studied.

the outcomes of the proposed model depict the cutback in subthreshold channel leakage current as compared to existing triple metal structures.

the analytical results show the excellent agreement with the simulated results.