Light-induced etching of silicon

Abstract EN

In this work, an ordinary light is used for photo-chemical etching of n-type silicon wafer in HF solution.

Scanning electron microscopy is used to monitor changes in surface morphology produced during the etching process.

Uniform porous layer has been observed for various irradiation times.

Our technique offers a great controlling parameter on the porous layer uniformity compared with the porous layer achieved by using a laser beam.

Electrical properties and porous layer thickness of the photo produced layer have been studied.