The effect of grain boundary on the electrical and photoelectrical characteristics of Aup-Si schottky diode

Abstract EN

This paper is intended to study the influence of the grain boundaries on the electronic and optoelectronic behavior of Au / P-Si Schottky diode.

These diodes were fabricated by evaporation of gold layers onto polycrystalline silicon wafers using vacuum evaporation technique.

The current-voltage characteristics at different grains boundary and temperatures, spectral response were investigated.

It is found that the Schottky barrier height for Au / P-Si diode obtained from I-V and spectral response characteristics are depends mainly on the surface grain boundary density and state density.