Preparation and characterization of MOS device using MgO film as A dielectric material

Abstract EN

In the present work, fabrication and characterization of Al / MgO / Si MOS device has been carried out using PLD as a deposition technique, and for comparison Al/SiO2/Si MOS device has been also constructed.

The obtained result show that , The Electrical and photovoltaic characteristics of MOS device are strongly dependent on the oxide type and thickness, beside that, the C-V measurement reveled that prepared device are of abrupt type.

The Spectral Responsively measurement of (Al / MgO / Si) MOS device is found to be 0.27A/W while of (Al / SiO2 / Si) MOS device is 0.20A/W and the Rise and Response time measurement of (Al / MgO / Si) MOS device was shorter than of (Al / SiO2 / Si) MOS-device.