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Beryllium doped p-type GaN grown by metal-organic chemical vapor deposition
Joint Authors
al-Tahtamouni, T. M.
Sedhain, A.
Lin, J. Y.
Jiang, H. X.
Source
Issue
Vol. 3, Issue 2 (31 Dec. 2010), pp.77-81, 5 p.
Publisher
Yarmouk University Deanship of Research and Graduate Studies
Publication Date
2010-12-31
Country of Publication
Jordan
No. of Pages
5
Main Subjects
Abstract EN
The authors report on the growth of Be-doped p-type GaN epilayers by metalorganic chemical vapor deposition (MOCVD).
The electrical and optical properties of the Be-doped GaN epilayers were studied by Hall-effect measurements and photoluminescence (PL) spectroscopy.
The PL spectra of Be-doped GaN epilayers exhibited two emission lines at 3.36 and 2.71 eV, which were absent in undoped epilayers.
The transition at 3.36 eV was assigned to the transition of free electrons to the neutral Be acceptor, Be0.
The transition at2.71 eV was assigned to the transition of electrons bound to deep level donors to the Be0 acceptors.
Three independent measurements: (a) resistivity vs.
temperature, (b) PL peak positions between Be doped and undoped GaN and (c) activation energy of 2.71 eV transition all indicate that the Be energy level is between 120 and 140 meV above the valence band.
This is about 20-40 meV shallower than the Mg energy level (160 meV) in GaN.
It is thus concluded that Be could be an excellent acceptor dopant in nitride materials.
American Psychological Association (APA)
al-Tahtamouni, T. M.& Sedhain, A.& Lin, J. Y.& Jiang, H. X.. 2010. Beryllium doped p-type GaN grown by metal-organic chemical vapor deposition. Jordan Journal of Physics،Vol. 3, no. 2, pp.77-81.
https://search.emarefa.net/detail/BIM-265270
Modern Language Association (MLA)
al-Tahtamouni, T. M.…[et al.]. Beryllium doped p-type GaN grown by metal-organic chemical vapor deposition. Jordan Journal of Physics Vol. 3, no. 2 (2010), pp.77-81.
https://search.emarefa.net/detail/BIM-265270
American Medical Association (AMA)
al-Tahtamouni, T. M.& Sedhain, A.& Lin, J. Y.& Jiang, H. X.. Beryllium doped p-type GaN grown by metal-organic chemical vapor deposition. Jordan Journal of Physics. 2010. Vol. 3, no. 2, pp.77-81.
https://search.emarefa.net/detail/BIM-265270
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references : p. 81
Record ID
BIM-265270