![](/images/graphics-bg.png)
Structural and electrical properties dependence on annealing temperature of A-GE : SB C-SI heterojunction
Other Title(s)
اعتماد الخواص التركيبية و الكهربائية على التلدين للمفرق الهجيني a-Ge : Sb c-Si
Joint Authors
Shahab, Aliyah Abd al-Muhsin
Mustafa, Muhammad Hamid
al-Lami, Husayn Khazal Rashid
Source
Ibn al-Haitham Journal for Pure and Applied Science
Issue
Vol. 24, Issue 1 (31 Mar. 2011)7 p.
Publisher
University of Baghdad College of Education for Pure Science / Ibn al-Haitham
Publication Date
2011-03-31
Country of Publication
Iraq
No. of Pages
7
Main Subjects
Topics
Abstract AR
في هذا البحث درس تأثير التلدين في الخواص التركيبية لأغشية a-Ge المطعمة ب Sb و الخواص الكهربائية للمفرق الهجيني a-Ge : Sb / c-Si النتائج من ترسيب a-Ge : Sb بطريقة التبخير الحراري على السليكون.
الخواص الكهربائية للمفرق الهجيني تتضمن خصائص التيار–فولتية في حالة الظلام و بدرجات تلدين مختلفة و خصائص سعة–فولتية.
و من خصائص سعة–فولتية تبين الهجيني كان من النوع المنحدر و أن جهد البناء تم تحديده من منحنى الفولتية و مقلوب مربع السعة و تبين أن جهد البناء للمفرق الهجيني يزداد بزيادة درجات حرارة التلدين.
Abstract EN
In this work, we are Study the effect of annealing temperature on the structure of a-Ge films doped with Sb and the electrical properties of a-Ge : Sb / c-Si heterojunction fabricated by deposition of a-Ge : Sb film on c-Si by using thermal evaporation.
Electrical properties of a-Ge : Sb / c-Si heterojunction include I-V characteristics in dark at different annealing temperatures and C-V characteristics and with the C-V characteristics suggest that the fabricated heterojunction was abrupt type, built in potential determined by extrapolation from 1/C2-V curve and show that the built - in potential (Vbi) for the Ge : Sb / Si system increases with the increase of annealing temperatures.
American Psychological Association (APA)
Shahab, Aliyah Abd al-Muhsin& al-Lami, Husayn Khazal Rashid& Mustafa, Muhammad Hamid. 2011. Structural and electrical properties dependence on annealing temperature of A-GE : SB C-SI heterojunction. Ibn al-Haitham Journal for Pure and Applied Science،Vol. 24, no. 1.
https://search.emarefa.net/detail/BIM-286801
Modern Language Association (MLA)
Shahab, Aliyah Abd al-Muhsin…[et al.]. Structural and electrical properties dependence on annealing temperature of A-GE : SB C-SI heterojunction. Ibn al-Haitham Journal for Pure and Applied Science Vol. 24, no. 1 (2011).
https://search.emarefa.net/detail/BIM-286801
American Medical Association (AMA)
Shahab, Aliyah Abd al-Muhsin& al-Lami, Husayn Khazal Rashid& Mustafa, Muhammad Hamid. Structural and electrical properties dependence on annealing temperature of A-GE : SB C-SI heterojunction. Ibn al-Haitham Journal for Pure and Applied Science. 2011. Vol. 24, no. 1.
https://search.emarefa.net/detail/BIM-286801
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-286801