Electrical and optoelectronic properties ofp-pbse n-si heterojunction

Abstract EN

Electrical and optoelectronic properties of p-PbSe / n-Si heterojunction detector have been investigated.

The electrical properties under dark condition show a rectifying behavior with low rectification factor, and exhibits soft breakdown reverse current.

C-V characteristics suggest that the fabricated diode was abrupt type, built in potential determined by extrapolation from C2-V curve to the point (V = 0) and it was equal to (2.25V). Results of I-V characteristics under illumination conditions with reverse bias voltage exhibit linear behavior with no saturation limit.