On the influence of metal deposition on responsivity peak of cleaned silicon photodetector

Abstract EN

In the present work, p-type Si wafer of (111) orientation and 3 Ω.

cm resistivity had been doped with phosphor by thermal diffusion process to fabricate p-n junction detector.

The main optoelectronic properties of the fabricated detectors were studied.

Thin films of ultrapure Cu, Bi, Ag, and Al were deposited on the sensitive area of the detectors (donor side).

On the base of the transmission and absorption phenomena of the deposited films, peak response data of these detectors that conventionally at near IR (850-900 nm) before deposition was reduced and resulted in peak response at 600 ± 25 nm after deposition.