Etching rate enhancement of porous silicon produced by lasers

Abstract EN

Two laser systems work with different operational modes have been used to produce silicon nanostructure surfaces.

Pulsed Nd :YAG laser has been employed to produce silicon textured surface which containing nano /microstructures.

Effects of laser energies (80 – 200) mj were examined to produce surface of different structures.

While Diode laser (532 nm) of fixed power (50 mW) was used in the second stage to modify the porous structure over the textured surface.

The effect of different surface morphology on the laser induced etching process was studied using atomic force microscope (AFM) and an image processing program to sketch the surface plot to the samples depending on the optical microscope photos.

The photoluminescence spectra have been utilized to study the nanocrystallite size distribution in porous silicon, it shows high peak position lies in (2 - 2.1) eV.