Gamma irradiation effect on bipolar junction transistor BC107

Abstract EN

Gamma radiation has been found to seriously change the electronic properties of a semiconductor, leading to possible systems failer.

In this study, the effect of low gamma radiation doses on NPN bipolar junction transistors was studied.

Transistors of the same commercial type BC107 were exposed to different gamma doses.

The collector current was found to increase rapidly and then mildly as a function of the output voltage for a constant base current.

The collector current was found to increase as the base current increases for a constant The effect of gamma radiation is to decrease the collector current, due to the trapping of the free carriers in the interface of the transistor.

The voltage gain was found to decrease slightly as the doses increase at a given frequency and to decrease rapidly as the frequency increases.

These effects can be due to the production and trapping of the holes in the base region.