Structural and optical properties for nano Gax Sb1-x films

Abstract EN

Alloys of GaxSb1-x system with different Ga concentration (x = 0.4, 0.5, 0.6) have been prepared in evacuated quartz tubes.

The structure of the alloys were examined by X-ray diffraction analysis (XRD) and found to be polycrystalline of zincblend structure with strong crystalline orientation (220).

Thin films of GaxSb1-x system of about 1.0 μm thickness have been deposited by flash evaporation method on glass substrate at 473K substrate temperature (Ts) and under pressure 10-6 mbar.

This study concentrated on the effect of Ga concentration (x) on some physical properties of GaxSb1-x thin films such as structural and optical properties.

The structure of prepared films for various values of x was polycrystalline.

The X-ray diffraction analysis (XRD) for GaxSb1-x showed that the preferential orientation was (111) for all values of Ga concentration.

The grain size was varied with Ga concentration.

The optical analysis is performed with the FT-IR spectrophotometer.

The optical measurement showed that Ga x Sb1- x thin films has direct energy gap .It is found that the optical energy gap increased when x increased with the range (x = 0.4, 0.5 and 0.6).

The optical constant for GaxSb1- x films was varied with increasing x.

These prepared polycrystalline Ga x Sb1- x thin film was a good candidate for use as a base layer material in thermo photovoltaic (TPV).