Design and simulation of differential transimpedance amplifier (TIA)‎ based on 0.18 μm CMOS technology

Abstract EN

In an optical communication system, optoelectronic receiver, which consists of a photo detector and a trans impedance amplifier, is used to convert the optical signals into electrical signals in the front end.

Figure (1) shows the system block diagram of optical fiber communication [1].

A tele-and data-communications are developed rapidly.

Optic-fiber networks are widely implemented and the data speeds of the systems get higher and higher.

Accordingly, ultra-high speed ICs for different systems is needed.

Up to now, however, most ICs at gigabit per second are manufactured in GaAs and bipolar Silicon technologies at higher cost.

As the feature size getting smaller, CMOS technologies begin to take an important role in high performance and high speed ICs.

Nowadays, a feature size of 0.35-, 0.25-, and 0.18-μm CMOS technologies are available.

The simulated unity current gain cut off frequency (fT) of the above sub-micron CMOS technologies are 13.5-, 18.6-, and 49-GHz, respectively.

Conservatively, a transistor can be operated at the frequency of fT / 10.

Thus, these submicron CMOS technologies can be used in the ICs with upper frequencies of 1.35-, 1.86-, and 4.9-GHz, respectively.

Further, 1-Hz frequency band can carries approximately 2 bit data, resulting in the highest bit rates of > 2.5-, > 3.5-, and ≈ 10 Gb / s for three sub-micron CMOS technologies.