Electron transfer at semiconductor liquid interfaces
Other Title(s)
الانتقال الإلكتروني عند سطوح شبه الموصل سائل
Joint Authors
al-Ukayli, Hadi Jabbar Majbal
al-Ubaydi, Rafah Ismail Nuri
Source
Ibn al-Haitham Journal for Pure and Applied Science
Issue
Vol. 22, Issue 2 (30 Jun. 2009)9 p.
Publisher
University of Baghdad College of Education for Pure Science / Ibn al-Haitham
Publication Date
2009-06-30
Country of Publication
Iraq
No. of Pages
9
Main Subjects
Topics
Abstract EN
Electron Transfer reaction rate constants at Semiconductor / Liquid interfaces are calculated dy using the Fermi Golden Rule for Semiconductor.
The reorganization energy eV is computed for Semiconductor / Liquid Interfaces system in two solvents and compared with experimental value.
The driving force (free energy) ΔGo(eV) is calculated depending on spectrum Ru(H2L`)2 (NCS)2 .
The transfer is treated according with weak coupling (nonadiabatic) for two – state level between the Semiconductor and acceptor molecule state.
American Psychological Association (APA)
al-Ukayli, Hadi Jabbar Majbal& al-Ubaydi, Rafah Ismail Nuri. 2009. Electron transfer at semiconductor liquid interfaces. Ibn al-Haitham Journal for Pure and Applied Science،Vol. 22, no. 2.
https://search.emarefa.net/detail/BIM-354795
Modern Language Association (MLA)
al-Ukayli, Hadi Jabbar Majbal& al-Ubaydi, Rafah Ismail Nuri. Electron transfer at semiconductor liquid interfaces. Ibn al-Haitham Journal for Pure and Applied Science Vol. 22, no. 2 (2009).
https://search.emarefa.net/detail/BIM-354795
American Medical Association (AMA)
al-Ukayli, Hadi Jabbar Majbal& al-Ubaydi, Rafah Ismail Nuri. Electron transfer at semiconductor liquid interfaces. Ibn al-Haitham Journal for Pure and Applied Science. 2009. Vol. 22, no. 2.
https://search.emarefa.net/detail/BIM-354795
Data Type
Journal Articles
Language
English
Notes
Includes appendices.
Record ID
BIM-354795
