Numerical analysis of GaAs MESFETs OPFET
Joint Authors
Zaabat, M.
Saidi, Y.
Hamma, I.
Azizi, C.
Source
Journal of New Technology and Materials / Larbi Ben M'hidi Oum el-Bouaghi University.
Publisher
Larbi Ben M'hidi Oum el-Bouaghi University
Publication Date
2011-12-31
Country of Publication
Algeria
No. of Pages
4
Main Subjects
English Abstract
A Tow dimensional numerical model of channel potential for GaAs MESFET (Metal semiconductor field effect transistor) doped uniformly.
The model takes into acount the effects in channel region considering both the photoconductive effect and photovoltaic effect at the gate schottky.
The 2-D potential distribution function in the active layer of the divice is solved numerically under dark and illumination condition.
Data Type
Conference Papers
Record ID
BIM-367306
American Psychological Association (APA)
Hamma, I.& Saidi, Y.& Zaabat, M.& Azizi, C.. 2011-12-31. Numerical analysis of GaAs MESFETs OPFET. International Conference on New Materials and Active Devices (1st : 2011 : Umm al-Bawaqi, Algeria). . Vol. 1, no. 00 (Dec. 2011), pp.59-62.Oum el-Bouaghi Algeria : Larbi Ben M'hidi Oum el-Bouaghi University.
https://search.emarefa.net/detail/BIM-367306
Modern Language Association (MLA)
Hamma, I.…[et al.]. Numerical analysis of GaAs MESFETs OPFET. . Oum el-Bouaghi Algeria : Larbi Ben M'hidi Oum el-Bouaghi University. 2011-12-31.
https://search.emarefa.net/detail/BIM-367306
American Medical Association (AMA)
Hamma, I.& Saidi, Y.& Zaabat, M.& Azizi, C.. Numerical analysis of GaAs MESFETs OPFET. . International Conference on New Materials and Active Devices (1st : 2011 : Umm al-Bawaqi, Algeria).
https://search.emarefa.net/detail/BIM-367306
