A new drain current I-V model for MESFET with submicron gate
Joint Authors
Source
Journal of New Technology and Materials
Issue
Vol. 3, Issue 1 (30 Jun. 2013), pp.28-32, 5 p.
Publisher
Larbi Ben M'hidi Oum el-Bouaghi University
Publication Date
2013-06-30
Country of Publication
Algeria
No. of Pages
5
Main Subjects
Abstract EN
In this work we present a new nonlinear approach for the calculation of the static characteristics of MESFET GaAs with submicron gate.
First, we compare the results of the numerical simulations of the three main models for the MESFETs with submicron gate : Ahmed [1], Islam [2] and Memon [3] with experimental results.
Then we propose a new approach that takes into account the surface states of the Schottky junction through a new mobility law for the determination of the output characteristics.
The thermal effect is also represented in the mobility law.
The comparison of our model with the three previous models referring to the experimental data shows that our approach gives the most accuracy result.
Also, the proposed model can be used in the case of logic or analog circuits based on submicron GaAs MESFET.
American Psychological Association (APA)
Azizi, M.& Azizi, C.. 2013. A new drain current I-V model for MESFET with submicron gate. Journal of New Technology and Materials،Vol. 3, no. 1, pp.28-32.
https://search.emarefa.net/detail/BIM-368190
Modern Language Association (MLA)
Azizi, M.& Azizi, C.. A new drain current I-V model for MESFET with submicron gate. Journal of New Technology and Materials Vol. 3, no. 1 (2013), pp.28-32.
https://search.emarefa.net/detail/BIM-368190
American Medical Association (AMA)
Azizi, M.& Azizi, C.. A new drain current I-V model for MESFET with submicron gate. Journal of New Technology and Materials. 2013. Vol. 3, no. 1, pp.28-32.
https://search.emarefa.net/detail/BIM-368190
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references : p. 32
Record ID
BIM-368190