Salicide process for submicron bicmos technology
Source
The Arabian Journal for Science and Engineering. Section B, Engineering
Issue
Vol. 26, Issue 2B (31 Oct. 2001), pp.133-143, 11 p.
Publisher
King Fahd University of Petroleum and Minerals
Publication Date
2001-10-31
Country of Publication
Saudi Arabia
No. of Pages
11
Main Subjects
Abstract EN
Simultaneous titanium salicide formation on doped/undoped Si and Polysilicon (poly-Si) can be accompanied by undesirable materials effects such as: salicide lateral growth over the sidewall spacer oxide and hence bridging of the gate to source/drain (S/D), Ti reaction with the field oxide, resulting in global shorting of devices and circuits, and variations in salicide properties depending on dopant concentration/type in the Si.
To understand the interaction mechanisms, experiments were carried out to study the salicide growth rates, dopant/salicide reactions, rapid thermal processing (RTP) of poly-Si salicidation, Ti/oxide interactions, and salicide lateral growth as a function of temperature and process window.
Salicided BiCMOS devices were characterized by SEM, contact resistance, sheet resistance, and unction leakage current measurements.
The optimized salicide process exhibited characteristics suitable for submicron devices.
American Psychological Association (APA)
Naim, Abd Allah. 2001. Salicide process for submicron bicmos technology. The Arabian Journal for Science and Engineering. Section B, Engineering،Vol. 26, no. 2B, pp.133-143.
https://search.emarefa.net/detail/BIM-389437
Modern Language Association (MLA)
Naim, Abd Allah. Salicide process for submicron bicmos technology. The Arabian Journal for Science and Engineering. Section B, Engineering Vol. 26, no. 2B (Oct. 2001), pp.133-143.
https://search.emarefa.net/detail/BIM-389437
American Medical Association (AMA)
Naim, Abd Allah. Salicide process for submicron bicmos technology. The Arabian Journal for Science and Engineering. Section B, Engineering. 2001. Vol. 26, no. 2B, pp.133-143.
https://search.emarefa.net/detail/BIM-389437
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references : p. 143
Record ID
BIM-389437