Effect of silicon substrate on the x-ray photoemission quantum yield in chromium thin films

Abstract EN

-The x-ruy phutuemisxivn in pulses is calculated ui the absorption K-tdge of chromium in Cr and Cr/Si thin films.

For a given incidence angle, the photoemission in Cr films increases with increasing the thickness and saturates at the value 1500 A.

However, for Cr/Si system, the aspect of calculated curves changes completely and the emitted photoelectrons may issue from a thickness three times more important.

The distribution in depth of the photoemitted electrons of the different types is established for both Cr and Cr/Si thin films.

The magnitudes of the photoemission drops are related to the Crfiilm thickness and to the Si substrate.