Redistribution of the Sb + ions during copper silicides formation

Abstract EN

-The behaviour of ion-implanted Sb atoms in Si during copper silicide formation has been investigated bv mean of Rutherford backscattering spectroscopy and x-ray diffraction.

Cu thin films, - 1000 A thickness, were evaporated onto antimony implanted (100) oriented single-crystal silicon wafers with a dose of 5xJ0l}at.

cnr at 130 keV.

The samples were heal treated in vacuum by conventional thermal annealing at the range temperatures 500-700C for various times.

It was obser\'ed that, independently on the Sb dopant, two silicides ( Cu4Si and Cu3Si) were formed and grew in the considered temperature range.

Antimony atoms, initially implanted in the Si substrates, were found to be redistributed towards the samples free surface.