Hydrogented amorphous silicon and polycrist alline silicon deposited by dc magnetron sputtering at high rate

Abstract EN

-The hydrogenated silicon thin films are deposited by DC magnetron sputtering at high rate, Ihe films an obtained polycristalline or amorphous if the deposition temperature is high (>500 °C) or low (''500 °C respectively.

The deposition rate is estimated between 15 and 20 A/s.

We have investigated the films by eleclrica conductivity, photoconductivity and optical absorption.

The electrical measurements are done on th< temperature range between 77 K and 500 K.

The conductivity shows a linear variation in the Arrheniu.

representation, we ha\’e obtained an activation energy value which decreases from 0.80 to 0.58 eV when tin films deposition temperature increases from 260 to 600 °C.

The high deposition temperature films optica absorption versus the photon energy behcn’ior which tends towards the crystal silicon absorption characteristic The photoconductivity is measured under 100 mW light source over the same temperature range that lh< conductivity measurements.

All the films show a ratio value oPh'<7d (the photoconductivity to the conductivity between 10r and l(f at ambient temperature