Performance of SOI polysilicon emitter transistors in a radiation environment

Abstract EN

The effect of gamma radiation up to 60 krad(Si) on ZMR-SOI and bulk-Silicon Polysilicon Emitter Transistors was investigated both experimentally and theoretically.

MOS capacitors and Schottky diodes were used as vehicles for understanding the effect of gamma radiation on Polysilicon Emitter Transistors.

A positive charge accumulation, an increase in the surface recombination velocity, as well as a reduction in surface recombination lifetime in the oxide after gamma radiation have been responsible for degrading the DC characteristics of both ZMR-SOI and bulk-Silicon Polysilicon Emitter Transistors in the same manner.

To use SOI technology for bipolar applications, consideration has to be given to the quality of the field oxide in the base region which is responsible for the degradation of the bipolar transistor.

In SOI bipolar applications, a better surface and field oxide is required to assure the radiation hardened properties of the transistors to tolerate higher total dose effects.