Stressing effect and modifcation of current conduction in tantalum oxide films on n-GaAs sibstrate

Abstract EN

The mechanism of current flow in thermally oxidised oftantalum which has been evaporated by electron beam on surface of n-GaAs to fabricate a Metal Insulator - Semiconductor ( MIS ) devices was investigated .

The charge transport through tantalum oxide film appears to be controlled by the thermal excitation of electron from traps ( Poole-Frenkel effect).

The effect of stressing voltage on MIS devices were studied.

It was found that the charge trapping inside tantalum oxide film and at the n-GaAs/Ta2C)5 interface will modify the conduction through the insulating films.

The capacitance-voltage characteristic of the devices with and without stressing voltage were studied.

The flat band voltage Vpg was determnined and the shift in its value from negative to positive depend on the condition of the stress.