Electrical characteristics of channelled substrate alGaAs semiconductor laser
Joint Authors
Source
Mu'tah Journal for Research and Studies : Natural and Applied Sciences Series
Issue
Vol. 10, Issue 4 (30 Sep. 1995), pp.141-151, 11 p.
Publisher
Mutah University Deanship of Academic Research
Publication Date
1995-09-30
Country of Publication
Jordan
No. of Pages
11
Main Subjects
Abstract EN
In this paper we examine the existing models to predict the laser dynamics with the influence; of temperature variations.
Experimen- tal electrical characteristics of laser performance over the tempera- ture interval of 20-70 c arc presented; Threshold current, forward bias voltage, light Output, external differential quantum efficiency, and series resistance were studied as temperature parameters.
American Psychological Association (APA)
Azzawi, M. I.& Thomas, Ben. 1995. Electrical characteristics of channelled substrate alGaAs semiconductor laser. Mu'tah Journal for Research and Studies : Natural and Applied Sciences Series،Vol. 10, no. 4, pp.141-151.
https://search.emarefa.net/detail/BIM-396851
Modern Language Association (MLA)
Azzawi, M. I.& Thomas, Ben. Electrical characteristics of channelled substrate alGaAs semiconductor laser. Mu'tah Journal for Research and Studies : Natural and Applied Sciences Series Vol. 10, no. 4 (Sep. 1995), pp.141-151.
https://search.emarefa.net/detail/BIM-396851
American Medical Association (AMA)
Azzawi, M. I.& Thomas, Ben. Electrical characteristics of channelled substrate alGaAs semiconductor laser. Mu'tah Journal for Research and Studies : Natural and Applied Sciences Series. 1995. Vol. 10, no. 4, pp.141-151.
https://search.emarefa.net/detail/BIM-396851
Data Type
Journal Articles
Language
English
Notes
Includes appendix : p. 147-151
Record ID
BIM-396851
