I-V characteristics model for AlGaN GaN HEMTS using tcad-silvaco

Publication Date

2014-05-31

Country of Publication

Algeria

No. of Pages

Main Subjects

Electronic engineering

English Abstract

We report some results the drain current characteristics of AlGaN / GaN HEMT.

on are simulated by changing the different device parameters such as Al content x and the barrier thickness for different values of the gate voltage using Tcad-Silvaco numerical simulation software.

Drift–diffusion model has taken for simulating the proposed device.

we use SiC as a substrate for this structure, The channel is made of GaN and source-drain spacing is 1 μm.

Data Type

Conference Papers

Record ID

BIM-429646

American Psychological Association (APA)

Douara, Abd al-Malik& Djellouli, Bu Azzah& Rabihi, Abd al-Aziz& Zayyani, Abd al-Razzaq& Bilkadi, Nabil. 2014-05-31. I-V characteristics model for AlGaN GaN HEMTS using tcad-silvaco. International Conference on New Materials and Active Devices (2st : 2014 : Umm al-Bawaqi, Algeria). . Vol. 4, no. 1 (May. 2014), pp.1-5.Oum el-Bouaghi Algeria : Larbi Ben M'hidi Oum el-Bouaghi University.
https://search.emarefa.net/detail/BIM-429646

Modern Language Association (MLA)

Douara, Abd al-Malik…[et al.]. I-V characteristics model for AlGaN GaN HEMTS using tcad-silvaco. . Oum el-Bouaghi Algeria : Larbi Ben M'hidi Oum el-Bouaghi University. 2014-05-31.
https://search.emarefa.net/detail/BIM-429646

American Medical Association (AMA)

Douara, Abd al-Malik& Djellouli, Bu Azzah& Rabihi, Abd al-Aziz& Zayyani, Abd al-Razzaq& Bilkadi, Nabil. I-V characteristics model for AlGaN GaN HEMTS using tcad-silvaco. . International Conference on New Materials and Active Devices (2st : 2014 : Umm al-Bawaqi, Algeria).
https://search.emarefa.net/detail/BIM-429646