Memory and Spin Injection Devices Involving Half Metals
Joint Authors
Damewood, L.
Shaughnessy, M.
Snow, Ryan
Fong, C. Y.
Source
Issue
Vol. 2011, Issue 2011 (31 Dec. 2011), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2011-03-17
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Engineering Sciences and Information Technology
Chemistry
Civil Engineering
Abstract EN
We suggest memory and spin injection devices fabricated with half-metallic materials and based on the anomalous Hall effect.
Schematic diagrams of the memory chips, in thin film and bulk crystal form, are presented.
Spin injection devices made in thin film form are also suggested.
These devices do not need any external magnetic field but make use of their own magnetization.
Only a gate voltage is needed.
The carriers are 100% spin polarized.
Memory devices may potentially be smaller, faster, and less volatile than existing ones, and the injection devices may be much smaller and more efficient than existing spin injection devices.
American Psychological Association (APA)
Shaughnessy, M.& Snow, Ryan& Damewood, L.& Fong, C. Y.. 2011. Memory and Spin Injection Devices Involving Half Metals. Journal of Nanomaterials،Vol. 2011, no. 2011, pp.1-6.
https://search.emarefa.net/detail/BIM-448979
Modern Language Association (MLA)
Shaughnessy, M.…[et al.]. Memory and Spin Injection Devices Involving Half Metals. Journal of Nanomaterials No. 2011 (2011), pp.1-6.
https://search.emarefa.net/detail/BIM-448979
American Medical Association (AMA)
Shaughnessy, M.& Snow, Ryan& Damewood, L.& Fong, C. Y.. Memory and Spin Injection Devices Involving Half Metals. Journal of Nanomaterials. 2011. Vol. 2011, no. 2011, pp.1-6.
https://search.emarefa.net/detail/BIM-448979
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-448979