Comprehension of Postmetallization Annealed MOCVD-TiO2 on (NH4)2S Treated III-V Semiconductors
Joint Authors
Source
Active and Passive Electronic Components
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-10, 10 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-12-16
Country of Publication
Egypt
No. of Pages
10
Main Subjects
Abstract EN
The electrical characteristics of TiO2 films grown on III-V semiconductors (e.g., p-type InP and GaAs) by metal-organic chemical vapor deposition were studied.
With (NH4)2S treatment, the electrical characteristics of MOS capacitors are improved due to the reduction of native oxides.
The electrical characteristics can be further improved by the postmetallization annealing, which causes hydrogen atomic ion to passivate defects and the grain boundary of polycrystalline TiO2 films.
For postmetallization annealed TiO2 on (NH4)2S treated InP MOS, the leakage current densities can reach 2.7 × 10−7 and 2.3 × 10−7 A/cm2 at ±1 MV/cm, respectively.
The dielectric constant and effective oxide charges are 46 and 1.96 × 1012 C/cm2, respectively.
The interface state density is 7.13×1011 cm−2 eV−1 at the energy of 0.67 eV from the edge of valence band.
For postmetallization annealed TiO2 on (NH4)2S treated GaAs MOS, The leakage current densities can reach 9.7×10−8 and 1.4×10−7 at ±1 MV/cm, respectively.
The dielectric constant and effective oxide charges are 66 and 1.86×1012 C/cm2, respectively.
The interface state density is 5.96×1011 cm−2 eV−1 at the energy of 0.7 eV from the edge of valence band.
American Psychological Association (APA)
Lee, Ming-Kwei& Yen, Chih-Feng. 2012. Comprehension of Postmetallization Annealed MOCVD-TiO2 on (NH4)2S Treated III-V Semiconductors. Active and Passive Electronic Components،Vol. 2012, no. 2012, pp.1-10.
https://search.emarefa.net/detail/BIM-449641
Modern Language Association (MLA)
Lee, Ming-Kwei& Yen, Chih-Feng. Comprehension of Postmetallization Annealed MOCVD-TiO2 on (NH4)2S Treated III-V Semiconductors. Active and Passive Electronic Components No. 2012 (2012), pp.1-10.
https://search.emarefa.net/detail/BIM-449641
American Medical Association (AMA)
Lee, Ming-Kwei& Yen, Chih-Feng. Comprehension of Postmetallization Annealed MOCVD-TiO2 on (NH4)2S Treated III-V Semiconductors. Active and Passive Electronic Components. 2012. Vol. 2012, no. 2012, pp.1-10.
https://search.emarefa.net/detail/BIM-449641
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-449641