Radiation Hardness of Flash Memory Fabricated in Deep-Submicron Technology
Joint Authors
Stanković, Koviljka
Cavrić, Bojan
Pejović, Milić
Dolićanin, Edin
Petronijević, Predrag
Source
International Journal of Photoenergy
Issue
Vol. 2013, Issue 2013 (31 Dec. 2013), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2013-06-18
Country of Publication
Egypt
No. of Pages
7
Main Subjects
Abstract EN
This paper discusses the current problem of the electronic memory reliability in terms of the ionizing radiation effects.
The topic is actual since the high degree of components' miniaturization integrated into the flash memory causes the extreme sensitivity of this memory type to the ionizing radiation effects.
The effects of ionizing radiation may cause changes in stored data, or even the physical destruction of the components.
At the end, the experimentally and numerically obtained effects of radiation on specific flash memories are shown and discussed.
The results obtained by laboratory and numerical experiments showed good agreement with each other and with the theoretically expected results.
American Psychological Association (APA)
Cavrić, Bojan& Dolićanin, Edin& Petronijević, Predrag& Pejović, Milić& Stanković, Koviljka. 2013. Radiation Hardness of Flash Memory Fabricated in Deep-Submicron Technology. International Journal of Photoenergy،Vol. 2013, no. 2013, pp.1-7.
https://search.emarefa.net/detail/BIM-450512
Modern Language Association (MLA)
Cavrić, Bojan…[et al.]. Radiation Hardness of Flash Memory Fabricated in Deep-Submicron Technology. International Journal of Photoenergy No. 2013 (2013), pp.1-7.
https://search.emarefa.net/detail/BIM-450512
American Medical Association (AMA)
Cavrić, Bojan& Dolićanin, Edin& Petronijević, Predrag& Pejović, Milić& Stanković, Koviljka. Radiation Hardness of Flash Memory Fabricated in Deep-Submicron Technology. International Journal of Photoenergy. 2013. Vol. 2013, no. 2013, pp.1-7.
https://search.emarefa.net/detail/BIM-450512
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-450512