Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy
Joint Authors
Fukui, T.
Noborisaka, J.
Tomioka, K.
Hiruma, K.
Mohan, P.
Fujisawa, S.
Hayashida, A.
Hara, S.
Hua, B.
Yang, L.
Motohisa, J.
Source
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-29, 29 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2011-10-31
Country of Publication
Egypt
No. of Pages
29
Main Subjects
Engineering Sciences and Information Technology
Chemistry
Abstract EN
The fabrication of GaAs- and InP-based III-V semiconductor nanowires with axial/radial heterostructures by using selective-area metal-organic vapor-phase epitaxy is reviewed.
Nanowires, with a diameter of 50–300 nm and with a length of up to 10 μm, have been grown along the 〈111〉B or 〈111〉A crystallographic orientation from lithography-defined SiO2 mask openings on a group III-V semiconductor substrate surface.
An InGaAs quantum well (QW) in GaAs/InGaAs nanowires and a GaAs QW in GaAs/AlGaAs or GaAs/GaAsP nanowires have been fabricated for the axial heterostructures to investigate photoluminescence spectra from QWs with various thicknesses.
Transmission electron microscopy combined with energy dispersive X-ray spectroscopy measurements have been used to analyze the crystal structure and the atomic composition profile for the nanowires.
GaAs/AlGaAs, InP/InAs/InP, and GaAs/GaAsP core-shell structures have been found to be effective for the radial heterostructures to increase photoluminescence intensity and have enabled laser emissions from a single GaAs/GaAsP nanowire waveguide.
The results have indicated that the core-shell structure is indispensable for surface passivation and practical use of nanowire optoelectronics devices.
American Psychological Association (APA)
Hiruma, K.& Tomioka, K.& Mohan, P.& Yang, L.& Noborisaka, J.& Hua, B.…[et al.]. 2011. Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy. Journal of Nanotechnology،Vol. 2012, no. 2012, pp.1-29.
https://search.emarefa.net/detail/BIM-451397
Modern Language Association (MLA)
Hiruma, K.…[et al.]. Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy. Journal of Nanotechnology No. 2012 (2012), pp.1-29.
https://search.emarefa.net/detail/BIM-451397
American Medical Association (AMA)
Hiruma, K.& Tomioka, K.& Mohan, P.& Yang, L.& Noborisaka, J.& Hua, B.…[et al.]. Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy. Journal of Nanotechnology. 2011. Vol. 2012, no. 2012, pp.1-29.
https://search.emarefa.net/detail/BIM-451397
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-451397