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Crystal Growth Behaviors of Silicon during Melt Growth Processes
Author
Source
International Journal of Photoenergy
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-16, 16 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-03-19
Country of Publication
Egypt
No. of Pages
16
Main Subjects
Abstract EN
It is imperative to improve the crystal quality of Si multicrystal ingots grown by casting because they are widely used for solar cells in the present and will probably expand their use in the future.
Fine control of macro- and microstructures, grain size, grain orientation, grain boundaries, dislocation/subgrain boundaries, and impurities, in a Si multicrystal ingot, is therefore necessary.
Understanding crystal growth mechanisms in melt growth processes is thus crucial for developing a good technology for producing high-quality Si multicrystal ingots for solar cells.
In this review, crystal growth mechanisms involving the morphological transformation of the crystal-melt interface, grain boundary formation, parallel-twin formation, and faceted dendrite growth are discussed on the basis of the experimental results of in situ observations.
American Psychological Association (APA)
Fujiwara, Kozo. 2012. Crystal Growth Behaviors of Silicon during Melt Growth Processes. International Journal of Photoenergy،Vol. 2012, no. 2012, pp.1-16.
https://search.emarefa.net/detail/BIM-451449
Modern Language Association (MLA)
Fujiwara, Kozo. Crystal Growth Behaviors of Silicon during Melt Growth Processes. International Journal of Photoenergy No. 2012 (2012), pp.1-16.
https://search.emarefa.net/detail/BIM-451449
American Medical Association (AMA)
Fujiwara, Kozo. Crystal Growth Behaviors of Silicon during Melt Growth Processes. International Journal of Photoenergy. 2012. Vol. 2012, no. 2012, pp.1-16.
https://search.emarefa.net/detail/BIM-451449
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-451449