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A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching
Joint Authors
Volkova, Anna
Ivantsov, Vladimir
Source
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-08-30
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Abstract EN
It has been shown during the present study that the E-etching at elevated temperatures can be adopted for the dislocation etching in hydride vapor-phase epitaxy (HVPE) GaN layers.
It has been found that the X-ray diffraction (XRD) evaluation of the dislocation density in the thicker than 6 μm epilayers using conventional Williamson-Hall plots and Dunn-Koch equation is in an excellent agreement with the results of the elevated-temperature E-etching.
The dislocation distribution measured for 2-inch GaN-on-sapphire substrate suggests strongly the influence of the inelastic thermal stresses on the formation of the final dislocation pattern in the epilayer.
American Psychological Association (APA)
Ivantsov, Vladimir& Volkova, Anna. 2012. A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching. ISRN Condensed Matter Physics،Vol. 2012, no. 2012, pp.1-6.
https://search.emarefa.net/detail/BIM-452653
Modern Language Association (MLA)
Ivantsov, Vladimir& Volkova, Anna. A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching. ISRN Condensed Matter Physics No. 2012 (2012), pp.1-6.
https://search.emarefa.net/detail/BIM-452653
American Medical Association (AMA)
Ivantsov, Vladimir& Volkova, Anna. A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching. ISRN Condensed Matter Physics. 2012. Vol. 2012, no. 2012, pp.1-6.
https://search.emarefa.net/detail/BIM-452653
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-452653